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Smart Modular SH564128FH8NZQNSCG 4GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
比较
Smart Modular SH564128FH8NZQNSCG 4GB vs Micron Technology 18ASF2G72PDZ-2G3A1 16GB
总分
Smart Modular SH564128FH8NZQNSCG 4GB
总分
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
差异
规格
评论
差异
需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
41
左右 32% 更低的延时
更快的读取速度,GB/s
9.4
7.7
测试中的平均数值
需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
报告一个错误
更快的写入速度,GB/s
7.6
5.5
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Smart Modular SH564128FH8NZQNSCG 4GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
41
读取速度,GB/s
9.4
7.7
写入速度,GB/s
5.5
7.6
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1453
1855
Smart Modular SH564128FH8NZQNSCG 4GB RAM的比较
Smart Modular SG572124ABS857P2SF 4GB
Mushkin 992046 (997046) 4GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2133C15-8GFXR 8GB
Protocol Engines Kingrock 800 2GB 2GB
Kingston 9905665-020.A00G 4GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Kingston 9905469-143.A00LF 4GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CM4X4GF2400C16N2 4GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMWS8GL3200K16W4E 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3400C16-8GTZKW 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2133C15-16GVR 16GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C16-16GTRS 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMW64GX4M8Z2933C16 8GB
SpecTek Incorporated PSD34G13332 4GB
Samsung M393A2K43BB1-CPB 16GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-4000C19-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 2400 C17 8GB
报告一个错误
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Bug description
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