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Kingston KVR16N11/8-SP 8GB
Mushkin MR[A/B]4U280HHHH8G 8GB

Kingston KVR16N11/8-SP 8GB vs Mushkin MR[A/B]4U280HHHH8G 8GB

总分
star star star star star
Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分
star star star star star
Mushkin MR[A/B]4U280HHHH8G 8GB

Mushkin MR[A/B]4U280HHHH8G 8GB

差异 规格 评论

差异

Kingston KVR16N11/8-SP 8GB 需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 72
    左右 64% 更低的延时
  • 更快的写入速度，GB/s
    9.5 left arrow 8.5
    测试中的平均数值
Mushkin MR[A/B]4U280HHHH8G 8GB 需要考虑的原因
Mushkin MR[A/B]4U280HHHH8G 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.6 left arrow 13.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston KVR16N11/8-SP 8GB
Mushkin MR[A/B]4U280HHHH8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 72
  • 读取速度，GB/s
    13.9 left arrow 14.6
  • 写入速度，GB/s
    9.5 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2432 left arrow 1918

Kingston KVR16N11/8-SP 8GB RAM的比较

Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB

Mushkin MR[A/B]4U280HHHH8G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Kingston KVR16N11/8-SP 8GB
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Mushkin MR[A/B]4U280HHHH8G 8GB
Mushkin MR[A/B]4U280HHHH8G 8GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
内存RAM
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内存RAM
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内存RAM
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Gloway International (HK) STKD4GAM2133-F 8GB
内存RAM
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Micron Technology 36ADS2G72PZ-2G1A1 16GB
内存RAM
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内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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G Skill Intl F4-3200C16-16GVK 16GB
内存RAM