Kingston KVR533D2N4 512MB vs Corsair CMK8GX4M2B4266C19 4GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Corsair CMK8GX4M2B4266C19 4GB

Corsair CMK8GX4M2B4266C19 4GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Corsair CMK8GX4M2B4266C19 4GB

需要考虑的原因
Corsair CMK8GX4M2B4266C19 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 75

左右 -317% 更低的延时
更快的读取速度，GB/s

20.9 1

测试中的平均数值
更快的写入速度，GB/s

16.7 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Corsair CMK8GX4M2B4266C19 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 18
读取速度，GB/s

1,943.5 20.9
写入速度，GB/s

1,672.1 16.7
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 3180

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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Samsung M378A1K43CB2-CRC 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Samsung M378A1G43DB0-CPB 8GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Corsair CM4B16G1L3200K18K2 16GB

Corsair CM4B16G1L3200K18K2 16GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston KHX3200C20S4/16GX 16GB

Kingston KHX3200C20S4/16GX 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Teikon TMA81GS6AFR8N-UHSC 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB