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Kingston KVR533D2N4 512MB
Crucial Technology BL16G32C16U4W.M8FB1 16GB

Kingston KVR533D2N4 512MB vs Crucial Technology BL16G32C16U4W.M8FB1 16GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Crucial Technology BL16G32C16U4W.M8FB1 16GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Crucial Technology BL16G32C16U4W.M8FB1 16GB 需要考虑的原因
Crucial Technology BL16G32C16U4W.M8FB1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 75
    左右 -134% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 4200
    左右 5.07 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 32
  • 读取速度，GB/s
    1,943.5 left arrow 18.7
  • 写入速度，GB/s
    1,672.1 left arrow 14.6
  • 内存带宽，mbps
    4200 left arrow 21300
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    301 left arrow 3659

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB RAM的比较

Smart Modular SG564568FG8N6KF-Z2 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905665-009.A00G 4GB
Kingston 9905665-009.A00G 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-3200C16-8GTZR 8GB
G Skill Intl F4-3200C16-8GTZR 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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G Skill Intl F4-4000C15-8GTRS 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Neo Forza GKE160SO204808-3200 16GB
Neo Forza GKE160SO204808-3200 16GB
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Peak Electronics 256X64M-67E 2GB
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Patriot Memory (PDP Systems) 2400 C15 Series 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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Wilk Elektronik S.A. W-MEM2666S416G 16GB
内存RAM
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Corsair CMN32GX4M2Z3600C16 16GB
Corsair CMN32GX4M2Z3600C16 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMT64GX4M4K3600C16 16GB
Corsair CMT64GX4M4K3600C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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King Tiger Technology Tigo-2133Mhz-8G 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
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Corsair CMW32GX4M4Z4000C18 8GB
内存RAM