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Kingston KVR533D2N4 512MB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB

Kingston KVR533D2N4 512MB vs Crucial Technology BLS8G4D26BFSE.16FBR2 8GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB

Crucial Technology BLS8G4D26BFSE.16FBR2 8GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 75
    左右 -257% 更低的延时
  • 更快的读取速度，GB/s
    18.6 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 4200
    左右 5.07 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 21
  • 读取速度，GB/s
    1,943.5 left arrow 18.6
  • 写入速度，GB/s
    1,672.1 left arrow 15.0
  • 内存带宽，mbps
    4200 left arrow 21300
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    301 left arrow 3255

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Crucial Technology BLS8G4D26BFSE.16FBR2 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Corsair CMD8GX4M2B3600C18 4GB
Corsair CMD8GX4M2B3600C18 4GB
内存RAM
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston KMKYF9-HYA 8GB
Kingston KMKYF9-HYA 8GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston XJV223-MIE 16GB
Kingston XJV223-MIE 16GB
内存RAM
Nanya Technology M2S8G64CC8HB5N-DI 8GB
Nanya Technology M2S8G64CC8HB5N-DI 8GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Golden Empire CL16-16-16 D4-2400 8GB
Golden Empire CL16-16-16 D4-2400 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HMA82GU6AFR8N-TF 16GB
SK Hynix HMA82GU6AFR8N-TF 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Essencore Limited IM48GU48N28-GGGHM 8GB
Essencore Limited IM48GU48N28-GGGHM 8GB
内存RAM