RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston KVR533D2N4 512MB
Crucial Technology CT16G4DFD8213.16FDD1 16GB

Kingston KVR533D2N4 512MB vs Crucial Technology CT16G4DFD8213.16FDD1 16GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Crucial Technology CT16G4DFD8213.16FDD1 16GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    75 left arrow 76
    左右 1% 更低的延时
Crucial Technology CT16G4DFD8213.16FDD1 16GB 需要考虑的原因
Crucial Technology CT16G4DFD8213.16FDD1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.6 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.4 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 4200
    左右 4.05 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 76
  • 读取速度，GB/s
    1,943.5 left arrow 13.6
  • 写入速度，GB/s
    1,672.1 left arrow 6.4
  • 内存带宽，mbps
    4200 left arrow 17000
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    301 left arrow 1624

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Apacer Technology 78.DAGNN.4030B 16GB
Apacer Technology 78.DAGNN.4030B 16GB
内存RAM
Panram International Corporation W4U3200PS-16G 16GB
Panram International Corporation W4U3200PS-16G 16GB
G Skill Intl F4-2133C15-16GFX 16GB
G Skill Intl F4-2133C15-16GFX 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston KHX3000C16D4/16GX 16GB
Kingston KHX3000C16D4/16GX 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMD16GX4M4B3300C16 4GB
Corsair CMD16GX4M4B3300C16 4GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
DSL Memory CIR-W4SUSS2408G 8GB
DSL Memory CIR-W4SUSS2408G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X8GD3000C15K4 8GB
Corsair CM4X8GD3000C15K4 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905622-075.A00G 8GB
Kingston 9905622-075.A00G 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Corsair CMR32GX4M2F3600C18 16GB
Corsair CMR32GX4M2F3600C18 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-2800C16-4GRK 4GB
G Skill Intl F4-2800C16-4GRK 4GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
内存RAM