Kingston KVR533D2N4 512MB vs Crucial Technology CT16G4DFD824A.M16FD 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Crucial Technology CT16G4DFD824A.M16FD 16GB

Crucial Technology CT16G4DFD824A.M16FD 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Crucial Technology CT16G4DFD824A.M16FD 16GB

需要考虑的原因
Crucial Technology CT16G4DFD824A.M16FD 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 75

左右 -200% 更低的延时
更快的读取速度，GB/s

17 1

测试中的平均数值
更快的写入速度，GB/s

11.3 1,672.1

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Crucial Technology CT16G4DFD824A.M16FD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 25
读取速度，GB/s

1,943.5 17.0
写入速度，GB/s

1,672.1 11.3
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

301 2912

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64AZ-2G3E1 16GB

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SK Hynix HMT351R7EFR8C-RD 4GB

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Micron Technology 16ATF4G64AZ-3G2E1 32GB

AMD R538G1601U2S 8GB

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G Skill Intl F4-2133C15-16GFX 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Corsair CMK32GX4M4D3000C16 8GB

Corsair CMK32GX4M4D3000C16 8GB

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Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-3000C14-16GVRD 16GB

G Skill Intl F4-3000C14-16GVRD 16GB

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB