Kingston KVR533D2N4 512MB vs Crucial Technology CT8G4SFD824A.C16FADP 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Crucial Technology CT8G4SFD824A.C16FADP 8GB

Crucial Technology CT8G4SFD824A.C16FADP 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Crucial Technology CT8G4SFD824A.C16FADP 8GB

需要考虑的原因
Crucial Technology CT8G4SFD824A.C16FADP 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 75

左右 -142% 更低的延时
更快的读取速度，GB/s

15.6 1

测试中的平均数值
更快的写入速度，GB/s

11.8 1,672.1

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Crucial Technology CT8G4SFD824A.C16FADP 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 31
读取速度，GB/s

1,943.5 15.6
写入速度，GB/s

1,672.1 11.8
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

301 2535

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9905678-042.A00G 8GB

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A-DATA Technology VDQVE1B16 2GB

Smart Modular SMS4TDC8C1K0446FCG 8GB

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MemxPro Inc. D4S8GHIOFFC 8GB

MemxPro Inc. D4S8GHIOFFC 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB