Samsung M471B5273CH0-CH9 4GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Micron Technology 4ATF51264HZ-2G6E1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E1 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 48

左右 -26% 更低的延时
更快的读取速度，GB/s

14.2 8.9

测试中的平均数值
更快的写入速度，GB/s

10.3 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 38
读取速度，GB/s

8.9 14.2
写入速度，GB/s

5.9 10.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1420 2148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

G Skill Intl F3-1866C8-8GTX 8GB

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G Skill Intl F4-4266C17-16GVKB 16GB

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Essencore Limited IM48GU88N21-FFFHM 8GB

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