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Samsung M471B5273CH0-CH9 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Compare
Samsung M471B5273CH0-CH9 4GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB
Overall score
Samsung M471B5273CH0-CH9 4GB
Overall score
Micron Technology 4ATF51264HZ-2G6E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Reasons to consider
Micron Technology 4ATF51264HZ-2G6E1 4GB
Report a bug
Below the latency in the PassMark tests, ns
38
48
Around -26% lower latency
Faster reading speed, GB/s
14.2
8.9
Average value in the tests
Faster write speed, GB/s
10.3
5.9
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273CH0-CH9 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
48
38
Read speed, GB/s
8.9
14.2
Write speed, GB/s
5.9
10.3
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1420
2148
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
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Absolute Latency
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