Kingston KVR533D2N4 512MB vs G Skill Intl F4-2400C17-16GSXF 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

G Skill Intl F4-2400C17-16GSXF 16GB

G Skill Intl F4-2400C17-16GSXF 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

G Skill Intl F4-2400C17-16GSXF 16GB

需要考虑的原因
G Skill Intl F4-2400C17-16GSXF 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 75

左右 -134% 更低的延时
更快的读取速度，GB/s

11.1 1

测试中的平均数值
更快的写入速度，GB/s

13.5 1,672.1

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

G Skill Intl F4-2400C17-16GSXF 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 32
读取速度，GB/s

1,943.5 11.1
写入速度，GB/s

1,672.1 13.5
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

301 2855

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

G Skill Intl F4-2400C17-16GSXF 16GB

G Skill Intl F4-2400C17-16GSXF 16GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Samsung M393A5143DB0-CPB 4GB

Samsung M393A5143DB0-CPB 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Wilk Elektronik S.A. GR2133S464L15/16G 16GB

Wilk Elektronik S.A. GR2133S464L15/16G 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Crucial Technology CT16G4SFD824A.M16FJ 16GB

Crucial Technology CT16G4SFD824A.M16FJ 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

G Skill Intl F4-2666C15-8GVR 8GB

G Skill Intl F4-2666C15-8GVR 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Kingston 9905625-029.A00G 8GB

Kingston 9905625-029.A00G 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C16-16GIS 16GB

G Skill Intl F4-3200C16-16GIS 16GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Kingston KTP9W1-MIE 16GB

Kingston KTP9W1-MIE 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Corsair CMSX64GX4M2A3200C22 32GB

Corsair CMSX64GX4M2A3200C22 32GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Patriot Memory (PDP Systems) PSD48G21332 8GB

Patriot Memory (PDP Systems) PSD48G21332 8GB