Kingston KVR533D2N4 512MB vs G Skill Intl F4-3600C17-4GVK 4GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

G Skill Intl F4-3600C17-4GVK 4GB

需要考虑的原因
G Skill Intl F4-3600C17-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 75

左右 -121% 更低的延时
更快的读取速度，GB/s

14.8 1

测试中的平均数值
更快的写入速度，GB/s

11.5 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

G Skill Intl F4-3600C17-4GVK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 34
读取速度，GB/s

1,943.5 14.8
写入速度，GB/s

1,672.1 11.5
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 2588

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB

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SK Hynix HMT351S6CFR8C-PB 4GB

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Essencore Limited KD48GU880-32A160U 8GB

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Samsung M378A1K43CB2-CTD 8GB

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Qimonda 64T128020EDL2.5C2 1GB

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Crucial Technology CT32G4DFD8266.M16FB 32GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

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Apacer Technology 78.CAGP7.AFW0C 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB