RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston KVR533D2N4 512MB
G Skill Intl F4-4133C17-8GTZR 8GB

Kingston KVR533D2N4 512MB vs G Skill Intl F4-4133C17-8GTZR 8GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
G Skill Intl F4-4133C17-8GTZR 8GB

G Skill Intl F4-4133C17-8GTZR 8GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
G Skill Intl F4-4133C17-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-4133C17-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 75
    左右 -200% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.2 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 4200
    左右 4.05 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
G Skill Intl F4-4133C17-8GTZR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 25
  • 读取速度，GB/s
    1,943.5 left arrow 19.5
  • 写入速度，GB/s
    1,672.1 left arrow 16.2
  • 内存带宽，mbps
    4200 left arrow 17000
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    301 left arrow 3890

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

G Skill Intl F4-4133C17-8GTZR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
内存RAM
Samsung M4 70T5267AZ3-CF7 4GB
Samsung M4 70T5267AZ3-CF7 4GB
Kingston ACR256X64D2S800C6 2GB
Kingston ACR256X64D2S800C6 2GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
内存RAM
AMD R9S48G3206U2S 8GB
AMD R9S48G3206U2S 8GB
Team Group Inc. DDR4 3600 8GB
Team Group Inc. DDR4 3600 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905630-052.A00G 16GB
Kingston 9905630-052.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2133C15-16GIS 16GB
G Skill Intl F4-2133C15-16GIS 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
内存RAM
A-DATA Technology ADOVF1B163BEG 2GB
A-DATA Technology ADOVF1B163BEG 2GB
Kingston 9905678-102.A00G 8GB
Kingston 9905678-102.A00G 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
DSL Memory D4SS12081SH21A-A 4GB
DSL Memory D4SS12081SH21A-A 4GB
内存RAM