Samsung M4 70T5267AZ3-CF7 4GB vs Kingston ACR256X64D2S800C6 2GB

总分

Samsung M4 70T5267AZ3-CF7 4GB

Samsung M4 70T5267AZ3-CF7 4GB

总分

Kingston ACR256X64D2S800C6 2GB

Kingston ACR256X64D2S800C6 2GB

差异规格评论

差异

Samsung M4 70T5267AZ3-CF7 4GB

需要考虑的原因
Samsung M4 70T5267AZ3-CF7 4GB

报告一个错误

低于PassMark测试中的延时，ns

62 64

左右 3% 更低的延时

Kingston ACR256X64D2S800C6 2GB

需要考虑的原因
Kingston ACR256X64D2S800C6 2GB

报告一个错误

更快的读取速度，GB/s

4 4

测试中的平均数值
更快的写入速度，GB/s

1,915.8 1,810.1

测试中的平均数值

规格

完整的技术规格清单

Samsung M4 70T5267AZ3-CF7 4GB

Kingston ACR256X64D2S800C6 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

62 64
读取速度，GB/s

4,311.6 4,472.0
写入速度，GB/s

1,810.1 1,915.8
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

804 726

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M4 70T5267AZ3-CF7 4GB

Samsung M4 70T5267AZ3-CF7 4GB

Kingston ACR256X64D2S800C6 2GB

Kingston ACR256X64D2S800C6 2GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

G Skill Intl F4-3200C14-16GTZN 16GB

G Skill Intl F4-3200C14-16GTZN 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston KHX2933C17D4/8G 8GB

Kingston KHX2933C17D4/8G 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Corsair CMD32GX4M2C3466C16W 16GB

Corsair CMD32GX4M2C3466C16W 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Avant Technology J644GU44J2320NQ 32GB

Avant Technology J644GU44J2320NQ 32GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Panram International Corporation PUD42400C168GVS 8GB

Panram International Corporation PUD42400C168GVS 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Kingston CBD24D4U7S8MA-8 8GB

Kingston CBD24D4U7S8MA-8 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB