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Kingston KVR533D2N4 512MB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Kingston KVR533D2N4 512MB vs Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 75
    左右 -188% 更低的延时
  • 更快的读取速度，GB/s
    23.1 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    19.0 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 4200
    左右 5.07 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 26
  • 读取速度，GB/s
    1,943.5 left arrow 23.1
  • 写入速度，GB/s
    1,672.1 left arrow 19.0
  • 内存带宽，mbps
    4200 left arrow 21300
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 3
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    301 left arrow 4276

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB RAM的比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Hewlett-Packard 7EH55AA# 8GB
Hewlett-Packard 7EH55AA# 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C15-8GTZR 8GB
G Skill Intl F4-4000C15-8GTZR 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9965600-018.A00G 16GB
Kingston 9965600-018.A00G 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 99U5712-002.A00G 16GB
Kingston 99U5712-002.A00G 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMK64GX4M2D3600C18 32GB
Corsair CMK64GX4M2D3600C18 32GB
内存RAM
Kingston 99U5584-010.A00LF 4GB
Kingston 99U5584-010.A00LF 4GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3000C15-8GVR 8GB
G Skill Intl F4-3000C15-8GVR 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BL4G24C16U4B.8FE 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
SK Hynix HMA81GU6DJR8N-WM 8GB
SK Hynix HMA81GU6DJR8N-WM 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905665-014.A00G 4GB
Kingston 9905665-014.A00G 4GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
SK Hynix HMA81GU6DJR8N-WM 8GB
SK Hynix HMA81GU6DJR8N-WM 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C15-8GTZRX 8GB
G Skill Intl F4-2400C15-8GTZRX 8GB
内存RAM