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Kingston KVR533D2N4 512MB
Kingston ACR21D4S15HAG/8G 8GB

Kingston KVR533D2N4 512MB vs Kingston ACR21D4S15HAG/8G 8GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Kingston ACR21D4S15HAG/8G 8GB

Kingston ACR21D4S15HAG/8G 8GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Kingston ACR21D4S15HAG/8G 8GB 需要考虑的原因
Kingston ACR21D4S15HAG/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 75
    左右 -188% 更低的延时
  • 更快的读取速度，GB/s
    13.6 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 4200
    左右 4.05 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Kingston ACR21D4S15HAG/8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 26
  • 读取速度，GB/s
    1,943.5 left arrow 13.6
  • 写入速度，GB/s
    1,672.1 left arrow 10.7
  • 内存带宽，mbps
    4200 left arrow 17000
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    301 left arrow 2406

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Kingston ACR21D4S15HAG/8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston ACR21D4S15HAG/8G 8GB
Kingston ACR21D4S15HAG/8G 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
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内存RAM
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内存RAM
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Crucial Technology BL8G36C16U4B.M8FE1 8GB
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Essencore Limited IM4AGU88N26-GIIHMB 16GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
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内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
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内存RAM
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Kingston 9965525-155.A00LF 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3200C16-16GTZRX 16GB
G Skill Intl F4-3200C16-16GTZRX 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
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内存RAM
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Corsair CMK16GX4M2Z3600C14 8GB
内存RAM