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Kingston KVR533D2N4 512MB
Micron Technology 16ATF1G64AZ-2G3A2 8GB

Kingston KVR533D2N4 512MB vs Micron Technology 16ATF1G64AZ-2G3A2 8GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Micron Technology 16ATF1G64AZ-2G3A2 8GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Micron Technology 16ATF1G64AZ-2G3A2 8GB 需要考虑的原因
Micron Technology 16ATF1G64AZ-2G3A2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 75
    左右 -213% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 4200
    左右 4.57 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 24
  • 读取速度，GB/s
    1,943.5 left arrow 15.5
  • 写入速度，GB/s
    1,672.1 left arrow 9.8
  • 内存带宽，mbps
    4200 left arrow 19200
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    301 left arrow 2509

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston KVR533D2N4 512MB
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Micron Technology 16ATF1G64AZ-2G3A2 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
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内存RAM
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内存RAM
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Crucial Technology BLT2G3D1608DT1TX0 2GB
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