Kingston KVR533D2N4 512MB vs Micron Technology 16ATF2G64HZ-2G6J1 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Micron Technology 16ATF2G64HZ-2G6J1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6J1 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 75

左右 -97% 更低的延时
更快的读取速度，GB/s

15.2 1

测试中的平均数值
更快的写入速度，GB/s

11.4 1,672.1

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 38
读取速度，GB/s

1,943.5 15.2
写入速度，GB/s

1,672.1 11.4
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

301 2821

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin MR[A/B]4U266GHHF8G 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Samsung M393B5270CH0-CH9 4GB

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SK Hynix HYMP125U64CP8-S6 2GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

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