Kingston KVR533D2N4 512MB vs Micron Technology 8ATF1G64HZ-2G3B2 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Micron Technology 8ATF1G64HZ-2G3B2 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3B2 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 75

左右 -88% 更低的延时
更快的读取速度，GB/s

13.4 1

测试中的平均数值
更快的写入速度，GB/s

10.8 1,672.1

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 40
读取速度，GB/s

1,943.5 13.4
写入速度，GB/s

1,672.1 10.8
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

301 2495

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-1866C8-8GTX 8GB

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SK Hynix HMA81GS6AFR8N-VK 8GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Kingston KHX3200C18D4/8G 8GB

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Kingston 9905403-090.A01LF 4GB

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PUSKILL DDR3 1600 8G 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

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Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Golden Empire CL15-15-15 D4-2133 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston KM0VW4-MID 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB