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Samsung M471B5173DB0-YK0 4GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Samsung M471B5173DB0-YK0 4GB vs Crucial Technology BL8G36C16U4BL.M8FE1 8GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
Crucial Technology BL8G36C16U4BL.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 45
    左右 -73% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.7 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 26
  • 读取速度，GB/s
    12.0 left arrow 19.3
  • 写入速度，GB/s
    7.8 left arrow 16.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1939 left arrow 3733

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology DDR3 1333+ 2GB
A-DATA Technology DDR3 1333+ 2GB
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Corsair CM4X32GE2666C18S2 32GB
Corsair CM4X32GE2666C18S2 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston 99U5700-010.A00G 8GB
Kingston 99U5700-010.A00G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Samsung M393A2G40DB1-CRC 16GB
Samsung M393A2G40DB1-CRC 16GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4400C18-8GTRG 8GB
G Skill Intl F4-4400C18-8GTRG 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston HP26D4U6D8ME-16X 16GB
Kingston HP26D4U6D8ME-16X 16GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905712-009.A00G 16GB
Kingston 9905712-009.A00G 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston HP24D4U7S8MD-8 8GB
Kingston HP24D4U7S8MD-8 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-4000C18-8GTZKK 8GB
G Skill Intl F4-4000C18-8GTZKK 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Transcend Information JM3200HLE-32G 32GB
Transcend Information JM3200HLE-32G 32GB
内存RAM