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Kingston KVR533D2N4 512MB
Micron Technology 8ATF2G64AZ-3G2B1 16GB

Kingston KVR533D2N4 512MB vs Micron Technology 8ATF2G64AZ-3G2B1 16GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Micron Technology 8ATF2G64AZ-3G2B1 16GB 需要考虑的原因
Micron Technology 8ATF2G64AZ-3G2B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 75
    左右 -103% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 4200
    左右 6.1 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 37
  • 读取速度，GB/s
    1,943.5 left arrow 19.5
  • 写入速度，GB/s
    1,672.1 left arrow 12.4
  • 内存带宽，mbps
    4200 left arrow 25600
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    301 left arrow 3355

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB RAM的比较

Kingston 9905471-002.A00LF 2GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
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内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
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Smart Modular SH564128FH8NZQNSCG 4GB
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Kingston KVR16N11/8-SP 8GB
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内存RAM
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内存RAM
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内存RAM
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Kingston 9905713-035.A00G 8GB
内存RAM
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内存RAM
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内存RAM
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A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
内存RAM
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