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SK Hynix HMT425U6AFR6C-PB 2GB
Samsung M378B5773CH0-CK0 2GB

SK Hynix HMT425U6AFR6C-PB 2GB vs Samsung M378B5773CH0-CK0 2GB

总分
star star star star star
SK Hynix HMT425U6AFR6C-PB 2GB

SK Hynix HMT425U6AFR6C-PB 2GB

总分
star star star star star
Samsung M378B5773CH0-CK0 2GB

Samsung M378B5773CH0-CK0 2GB

差异 规格 评论

差异

SK Hynix HMT425U6AFR6C-PB 2GB 需要考虑的原因
SK Hynix HMT425U6AFR6C-PB 2GB
报告一个错误
  • 更快的读取速度，GB/s
    13.9 left arrow 11.8
    测试中的平均数值
Samsung M378B5773CH0-CK0 2GB 需要考虑的原因
Samsung M378B5773CH0-CK0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 40
    左右 -21% 更低的延时
  • 更快的写入速度，GB/s
    8.9 left arrow 8.6
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMT425U6AFR6C-PB 2GB
Samsung M378B5773CH0-CK0 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    40 left arrow 33
  • 读取速度，GB/s
    13.9 left arrow 11.8
  • 写入速度，GB/s
    8.6 left arrow 8.9
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2205 left arrow 1988

SK Hynix HMT425U6AFR6C-PB 2GB RAM的比较

Samsung M378B5773SB0-CK0 2GB

Samsung M378B5773CH0-CK0 2GB RAM的比较

Micron Technology 16JTF1G64AZ-1G6E1 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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