Kingston KVR533D2N4 512MB vs Samsung 18ASF1G72PDZ-2G1B1 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Samsung 18ASF1G72PDZ-2G1B1 16GB

需要考虑的原因
Samsung 18ASF1G72PDZ-2G1B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 75

左右 -134% 更低的延时
更快的读取速度，GB/s

9.8 1

测试中的平均数值
更快的写入速度，GB/s

8.6 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Samsung 18ASF1G72PDZ-2G1B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 32
读取速度，GB/s

1,943.5 9.8
写入速度，GB/s

1,672.1 8.6
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 2271

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMK16GX4M2Z2933C16 8GB

Corsair CMK16GX4M2Z2933C16 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Panram International Corporation D4N2400PS-8G 8GB

Panram International Corporation D4N2400PS-8G 8GB

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3000C16-16GISB 16GB

G Skill Intl F4-3000C16-16GISB 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Kingston KHX2666C16S4/32G 32GB

Kingston KHX2666C16S4/32G 32GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3000C15-8GRKB 8GB

G Skill Intl F4-3000C15-8GRKB 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Kingston XVTW4H-MIE 32GB

Kingston XVTW4H-MIE 32GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT16G4DFD8266.C16FN 16GB

Crucial Technology CT16G4DFD8266.C16FN 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 8ATF1G64HZ-2G3B2 8GB

Kingston 8ATF1G64HZ-2G3B2 8GB