Kingston KVR533D2N4 512MB vs Samsung M378A1K43BB1-CPB 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Samsung M378A1K43BB1-CPB 8GB

Samsung M378A1K43BB1-CPB 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Samsung M378A1K43BB1-CPB 8GB

需要考虑的原因
Samsung M378A1K43BB1-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 75

左右 -114% 更低的延时
更快的读取速度，GB/s

14.9 1

测试中的平均数值
更快的写入速度，GB/s

10.1 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Samsung M378A1K43BB1-CPB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 35
读取速度，GB/s

1,943.5 14.9
写入速度，GB/s

1,672.1 10.1
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 2613

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR533D2N4 512MB

Samsung M378A1K43BB1-CPB 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Corsair CMD32GX4M4B3733C17 8GB

Corsair CMD32GX4M4B3733C17 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA41UH-MEC1U2AW1 16GB

Asgard VMA41UH-MEC1U2AW1 16GB

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SK Hynix HYMP125U64CP8-S6 2GB

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Kingston 9905713-001.A00G 4GB