Kingston KVR533D2N4 512MB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

72 75

左右 -4% 更低的延时
更快的读取速度，GB/s

15.3 1

测试中的平均数值
更快的写入速度，GB/s

8.0 1,672.1

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 72
读取速度，GB/s

1,943.5 15.3
写入速度，GB/s

1,672.1 8.0
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

301 1817

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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G Skill Intl F5-5600J4040C16G 16GB

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V-GEN D4H8GL32A8TS 8GB

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Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

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