RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston KVR533D2N4 512MB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Kingston KVR533D2N4 512MB vs Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB 需要考虑的原因
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 75
    左右 -178% 更低的延时
  • 更快的读取速度，GB/s
    11.1 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.0 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 4200
    左右 4.05 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 27
  • 读取速度，GB/s
    1,943.5 left arrow 11.1
  • 写入速度，GB/s
    1,672.1 left arrow 6.0
  • 内存带宽，mbps
    4200 left arrow 17000
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    301 left arrow 1890

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
G Skill Intl F4-2133C15-8GFT 8GB
G Skill Intl F4-2133C15-8GFT 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK32GX4M4K4266C19 8GB
Corsair CMK32GX4M4K4266C19 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905711-038.A00G 8GB
Kingston 9905711-038.A00G 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung M393A2G40EB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMU32GX4M2A2666C16 16GB
Corsair CMU32GX4M2A2666C16 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston SMD4-S8G48HJ-26V 8GB
Kingston SMD4-S8G48HJ-26V 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2133C15-4GRS 4GB
G Skill Intl F4-2133C15-4GRS 4GB
内存RAM