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Kingston KVR800D2N6/2G 2GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB

Kingston KVR800D2N6/2G 2GB vs A-DATA Technology AO1E34RCTV2-BZWS 32GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
A-DATA Technology AO1E34RCTV2-BZWS 32GB

A-DATA Technology AO1E34RCTV2-BZWS 32GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 60
    左右 17% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 16.6
    测试中的平均数值
A-DATA Technology AO1E34RCTV2-BZWS 32GB 需要考虑的原因
A-DATA Technology AO1E34RCTV2-BZWS 32GB
报告一个错误
  • 更快的写入速度，GB/s
    15.3 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 60
  • 读取速度，GB/s
    5,143.3 left arrow 16.6
  • 写入速度，GB/s
    1,905.1 left arrow 15.3
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2813

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

A-DATA Technology AO1E34RCTV2-BZWS 32GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston KF3600C16D4/16GX 16GB
Kingston KF3600C16D4/16GX 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M393A5143DB0-CRC 4GB
Samsung M393A5143DB0-CRC 4GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
内存RAM
Ramaxel Technology RMUA5200MR78HAF-3200 8GB
Ramaxel Technology RMUA5200MR78HAF-3200 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
内存RAM
Kingston SNY1600S11-4G-EDEG 4GB
Kingston SNY1600S11-4G-EDEG 4GB
Kingston MSI24D4S7S8MB-8 8GB
Kingston MSI24D4S7S8MB-8 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Apacer Technology GD2.1542WS.001 8GB
Apacer Technology GD2.1542WS.001 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston ACR24D4U7D8MB-16 16GB
Kingston ACR24D4U7D8MB-16 16GB
内存RAM
Essencore Limited KD4AGS88A-26N1600 16GB
Essencore Limited KD4AGS88A-26N1600 16GB
Crucial Technology CT4G4DFS824A.C8FF 4GB
Crucial Technology CT4G4DFS824A.C8FF 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMR64GX4M4C3466C16 16GB
Corsair CMR64GX4M4C3466C16 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
SK Hynix HMT41GR7AFR4C-PB 8GB
SK Hynix HMT41GR7AFR4C-PB 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
内存RAM