Kingston KVR800D2N6/2G 2GB vs Corsair CMD32GX4M4C3000C15 8GB

总分

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分

Corsair CMD32GX4M4C3000C15 8GB

Corsair CMD32GX4M4C3000C15 8GB

差异规格评论

差异

Kingston KVR800D2N6/2G 2GB

需要考虑的原因
Kingston KVR800D2N6/2G 2GB

报告一个错误

更快的读取速度，GB/s

5 14.8

测试中的平均数值

Corsair CMD32GX4M4C3000C15 8GB

需要考虑的原因
Corsair CMD32GX4M4C3000C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 50

左右 -32% 更低的延时
更快的写入速度，GB/s

12.1 1,905.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston KVR800D2N6/2G 2GB

Corsair CMD32GX4M4C3000C15 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 38
读取速度，GB/s

5,143.3 14.8
写入速度，GB/s

1,905.1 12.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

855 3094

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G3B2 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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EVGA 8GX-D4-3000-MR 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Team Group Inc. DDR4 3600 8GB

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Kingston 99U5471-012.A00LF 4GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

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SK Hynix HMA81GS6DJR8N-VK 8GB

Lexar Co Limited LD4AU016G-H2666G 16GB

Lexar Co Limited LD4AU016G-H2666G 16GB

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Samsung M471B5273CH0-CH9 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F4-2800C15-8GVRB 8GB

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Kingston 9905403-444.A00LF 4GB

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G Skill Intl F4-4500C19-8GTZSWE 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CM4X16GE2666Z16K4 16GB

Corsair CM4X16GE2666Z16K4 16GB