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Kingston KVR800D2N6/2G 2GB
Corsair CMK16GX4M4C3200C15 4GB

Kingston KVR800D2N6/2G 2GB vs Corsair CMK16GX4M4C3200C15 4GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Corsair CMK16GX4M4C3200C15 4GB

Corsair CMK16GX4M4C3200C15 4GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 15.2
    测试中的平均数值
Corsair CMK16GX4M4C3200C15 4GB 需要考虑的原因
Corsair CMK16GX4M4C3200C15 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 50
    左右 -108% 更低的延时
  • 更快的写入速度，GB/s
    11.5 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Corsair CMK16GX4M4C3200C15 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 24
  • 读取速度，GB/s
    5,143.3 left arrow 15.2
  • 写入速度，GB/s
    1,905.1 left arrow 11.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2917

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Corsair CMK16GX4M4C3200C15 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Corsair CMK16GX4M4C3200C15 4GB
Corsair CMK16GX4M4C3200C15 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
SK Hynix HMA81GU7AFR8N-UH 8GB
SK Hynix HMA81GU7AFR8N-UH 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905625-030.A00G 8GB
Kingston 9905625-030.A00G 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK16GX4M2B3466C16 8GB
Corsair CMK16GX4M2B3466C16 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
G Skill Intl F4-3600C19-8GTZRB 8GB
G Skill Intl F4-3600C19-8GTZRB 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3333C16-16GTZSW 16GB
G Skill Intl F4-3333C16-16GTZSW 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Samsung M378A2K43CB1-CTD 16GB
Samsung M378A2K43CB1-CTD 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-4000C19-16GTZSW 16GB
G Skill Intl F4-4000C19-16GTZSW 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Kingston KWTHG4-MIE 16GB
Kingston KWTHG4-MIE 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Essencore Limited KD48GU880-34A170X 8GB
Essencore Limited KD48GU880-34A170X 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung T471A1K43CB1-CRC 8GB
Samsung T471A1K43CB1-CRC 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMSX16GX4M1A2400C16 16GB
Corsair CMSX16GX4M1A2400C16 16GB
内存RAM