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Kingston KVR800D2N6/2G 2GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB

Kingston KVR800D2N6/2G 2GB vs Crucial Technology BLS16G4S240FSD.16FBD 16GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Crucial Technology BLS16G4S240FSD.16FBD 16GB

Crucial Technology BLS16G4S240FSD.16FBD 16GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 14.3
    测试中的平均数值
Crucial Technology BLS16G4S240FSD.16FBD 16GB 需要考虑的原因
Crucial Technology BLS16G4S240FSD.16FBD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 50
    左右 -32% 更低的延时
  • 更快的写入速度，GB/s
    10.9 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 38
  • 读取速度，GB/s
    5,143.3 left arrow 14.3
  • 写入速度，GB/s
    1,905.1 left arrow 10.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2638

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Crucial Technology BLS16G4S240FSD.16FBD 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
内存RAM
Crucial Technology CT51264BF160BJ.M8F 4GB
Crucial Technology CT51264BF160BJ.M8F 4GB
Kingston HP26D4S9S8MHF-8 8GB
Kingston HP26D4S9S8MHF-8 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Kllisre HMA81GU6AFR8N-VK 8GB
Kllisre HMA81GU6AFR8N-VK 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Golden Empire CL16-16-16 D4-3000 4GB
Golden Empire CL16-16-16 D4-3000 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905700-013.A00G 8GB
Kingston 9905700-013.A00G 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
内存RAM
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
Samsung M378A1G43EB1-CRC 8GB
Samsung M378A1G43EB1-CRC 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4400C17-8GVK 8GB
G Skill Intl F4-4400C17-8GVK 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Corsair CMD32GX4M4B3466C16 8GB
Corsair CMD32GX4M4B3466C16 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Apacer Technology 78.C1GS7.DFW0C 8GB
Apacer Technology 78.C1GS7.DFW0C 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-4800C18-8GTRG 8GB
G Skill Intl F4-4800C18-8GTRG 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Teclast TLD416G26A30 16GB
Teclast TLD416G26A30 16GB
内存RAM