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Samsung M378A5244CB0-CTD 4GB
Corsair CMD16GX4M4B3200C15 4GB

Samsung M378A5244CB0-CTD 4GB vs Corsair CMD16GX4M4B3200C15 4GB

总分
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分
star star star star star
Corsair CMD16GX4M4B3200C15 4GB

Corsair CMD16GX4M4B3200C15 4GB

差异 规格 评论

差异

Samsung M378A5244CB0-CTD 4GB 需要考虑的原因
Samsung M378A5244CB0-CTD 4GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
Corsair CMD16GX4M4B3200C15 4GB 需要考虑的原因
Corsair CMD16GX4M4B3200C15 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 36
    左右 -64% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.1 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A5244CB0-CTD 4GB
Corsair CMD16GX4M4B3200C15 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 22
  • 读取速度，GB/s
    15.8 left arrow 17.7
  • 写入速度，GB/s
    11.8 left arrow 14.1
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2497 left arrow 3237

Samsung M378A5244CB0-CTD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB

Corsair CMD16GX4M4B3200C15 4GB RAM的比较

Kreton Corporation 51624xxxx68x35xxxx 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Corsair CMD16GX4M4B3200C15 4GB
Corsair CMD16GX4M4B3200C15 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3000C15-8GVS 8GB
G Skill Intl F4-3000C15-8GVS 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Smart Modular SF464128CK8I6GKSEG 4GB
Smart Modular SF464128CK8I6GKSEG 4GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3600C17-16GTZKK 16GB
G Skill Intl F4-3600C17-16GTZKK 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMT16GX4M2C3200C14 8GB
Corsair CMT16GX4M2C3200C14 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Kingston 9905625-097.A00G 16GB
Kingston 9905625-097.A00G 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Kingston 2G-UDIMM 2GB
Kingston 2G-UDIMM 2GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMK128GX4M8X3600C18 16GB
Corsair CMK128GX4M8X3600C18 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston 99U5713-003.A00G 4GB
Kingston 99U5713-003.A00G 4GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMW128GX4M8X3600C18 16GB
Corsair CMW128GX4M8X3600C18 16GB
内存RAM