RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston KVR800D2N6/2G 2GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB

Kingston KVR800D2N6/2G 2GB vs Crucial Technology CT8G4DFD824A.C16FBD2 8GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Crucial Technology CT8G4DFD824A.C16FBD2 8GB

Crucial Technology CT8G4DFD824A.C16FBD2 8GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 16.7
    测试中的平均数值
Crucial Technology CT8G4DFD824A.C16FBD2 8GB 需要考虑的原因
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 50
    左右 -79% 更低的延时
  • 更快的写入速度，GB/s
    10.4 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 28
  • 读取速度，GB/s
    5,143.3 left arrow 16.7
  • 写入速度，GB/s
    1,905.1 left arrow 10.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2962

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT8G4DFD824A.C16FBD2 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Samsung M393A5143DB0-CPB 4GB
Samsung M393A5143DB0-CPB 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
A-DATA Technology DDR4 3600 2OZ 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9905734-073.A00G 16GB
Kingston 9905734-073.A00G 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston KV0M5R-HYD 8GB
Kingston KV0M5R-HYD 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMW32GX4M4Z3200C16 8GB
Corsair CMW32GX4M4Z3200C16 8GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Samsung M471A4G43BB1-CWE 32GB
Samsung M471A4G43BB1-CWE 32GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
SK Hynix HMA41GR7AFR8N-TF 8GB
SK Hynix HMA41GR7AFR8N-TF 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-3600C18-32GVK 32GB
G Skill Intl F4-3600C18-32GVK 32GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston 9905712-008.A00G 16GB
Kingston 9905712-008.A00G 16GB
内存RAM