Kingston KVR800D2N6/2G 2GB vs G Skill Intl F4-3866C18-16GTZR 16GB

总分

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分

G Skill Intl F4-3866C18-16GTZR 16GB

G Skill Intl F4-3866C18-16GTZR 16GB

差异规格评论

差异

Kingston KVR800D2N6/2G 2GB

需要考虑的原因
Kingston KVR800D2N6/2G 2GB

报告一个错误

更快的读取速度，GB/s

5 17.5

测试中的平均数值

G Skill Intl F4-3866C18-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3866C18-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 50

左右 -47% 更低的延时
更快的写入速度，GB/s

17.0 1,905.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston KVR800D2N6/2G 2GB

G Skill Intl F4-3866C18-16GTZR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 34
读取速度，GB/s

5,143.3 17.5
写入速度，GB/s

1,905.1 17.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

855 3697

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Kingston KHX1600C9D3/4GX 4GB

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Corsair CMK16GX4M2Z3600C20 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Kingston 9905734-022.A00G 16GB

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Kingston KHX1600C9S3L/4G 4GB

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Corsair CMK64GX4M2Z4000C18 32GB

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Crucial Technology CT16G4SFRA32A.C16FP 16GB

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Kingston KVT8FP-HYC 4GB

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Mushkin MR[A/B]4U266GHHF16G 16GB

Mushkin MR[A/B]4U266GHHF16G 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB