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Kingston KVR800D2N6/2G 2GB
Kingston 9965662-013.A01G 16GB

Kingston KVR800D2N6/2G 2GB vs Kingston 9965662-013.A01G 16GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Kingston 9965662-013.A01G 16GB

Kingston 9965662-013.A01G 16GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
Kingston 9965662-013.A01G 16GB 需要考虑的原因
Kingston 9965662-013.A01G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 50
    左右 -25% 更低的延时
  • 更快的读取速度，GB/s
    9.2 left arrow 5
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.4 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Kingston 9965662-013.A01G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 40
  • 读取速度，GB/s
    5,143.3 left arrow 9.2
  • 写入速度，GB/s
    1,905.1 left arrow 6.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2125

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Kingston 9965662-013.A01G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Kingston 9965662-013.A01G 16GB
Kingston 9965662-013.A01G 16GB
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内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
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G Skill Intl F4-4400C18-8GTRG 8GB
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Kingston 9905403-174.A00LF 2GB
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Kingston 9905599-026.A00G 8GB
内存RAM
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Kingston 9965525-144.A00LF 8GB
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Corsair CMR16GX4M2C3466C16 8GB
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G Skill Intl F3-2666C12-8GTXD 8GB
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Samsung M378A5143EB1-CPB 4GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A2K43CB1-CRCR 16GB
内存RAM
Samsung M3 78T6553CZ3-CD5 512MB
Samsung M3 78T6553CZ3-CD5 512MB
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Corsair CM4B16G2L2666A18K2 16GB
内存RAM
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Samsung M393B5170FH0-CK0 4GB
Kingston 9965643-002.A01G 4GB
Kingston 9965643-002.A01G 4GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Corsair CMK16GX4M2A2400C16 8GB
内存RAM
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Kingston 99U5429-007.A00LF 2GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
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G Skill Intl F4-3200C16-32GTRG 32GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
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G Skill Intl F4-3600C14-8GTZRA 8GB
内存RAM
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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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G Skill Intl F4-3000C16-16GRS 16GB
内存RAM