Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-3600C14-8GTZRA 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

G Skill Intl F4-3600C14-8GTZRA 8GB

G Skill Intl F4-3600C14-8GTZRA 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

G Skill Intl F4-3600C14-8GTZRA 8GB

需要考虑的原因
G Skill Intl F4-3600C14-8GTZRA 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 28

左右 -17% 更低的延时
更快的读取速度，GB/s

20.3 12.7

测试中的平均数值
更快的写入速度，GB/s

16.6 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3600C14-8GTZRA 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 24
读取速度，GB/s

12.7 20.3
写入速度，GB/s

7.5 16.6
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 3987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9965525-138.A00LF 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

G Skill Intl F4-3466C16-4GTZ 4GB

G Skill Intl F4-3466C16-4GTZ 4GB

A-DATA Technology VDQVE1B16 2GB

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Corsair CM4X8GD3000C16K4 8GB

Corsair CM4X8GD3000C16K4 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3600C14-8GTZRA 8GB

G Skill Intl F4-3600C14-8GTZRA 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

G Skill Intl F4-2800C14-16GTZ 16GB

G Skill Intl F4-2800C14-16GTZ 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston 9905663-008.A00G 16GB

Kingston 9905663-008.A00G 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMK16GX4M2D3000C16 8GB

Corsair CMK16GX4M2D3000C16 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

G Skill Intl F4-3200C16-8GVKB 8GB

G Skill Intl F4-3200C16-8GVKB 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Crucial Technology CT8G4DFD824A.C16FE 8GB

Crucial Technology CT8G4DFD824A.C16FE 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Transcend Information TS1GLH64V4B 8GB

Transcend Information TS1GLH64V4B 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Corsair CM4B8G2J3000K15K 8GB

Corsair CM4B8G2J3000K15K 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Crucial Technology BLE16G4D32AEEA.K16FB 16GB

Crucial Technology BLE16G4D32AEEA.K16FB 16GB