Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

G Skill Intl F4-3466C16-4GTZ 4GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs G Skill Intl F4-3466C16-4GTZ 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分

G Skill Intl F4-3466C16-4GTZ 4GB

G Skill Intl F4-3466C16-4GTZ 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

报告一个错误

G Skill Intl F4-3466C16-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-3466C16-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 62

左右 -226% 更低的延时
更快的读取速度，GB/s

20 7.4

测试中的平均数值
更快的写入速度，GB/s

15.8 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

G Skill Intl F4-3466C16-4GTZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

62 19
读取速度，GB/s

7.4 20.0
写入速度，GB/s

5.9 15.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1612 3192

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

G Skill Intl F4-3466C16-4GTZ 4GB

G Skill Intl F4-3466C16-4GTZ 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Essencore Limited KD48GU880-32A160T 8GB

Essencore Limited KD48GU880-32A160T 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Crucial Technology CT8G4SFS824A.M8FD 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Kingston HP32D4U8S8HC-8XR 8GB

Kingston HP32D4U8S8HC-8XR 8GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Crucial Technology CT4G4DFS8266.C8FG 4GB

Crucial Technology CT4G4DFS8266.C8FG 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston KF3600C18D4/32GX 32GB

Kingston KF3600C18D4/32GX 32GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB