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Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-2800C14-16GTZ 16GB

Samsung M393A1G40DB0-CPB 8GB vs G Skill Intl F4-2800C14-16GTZ 16GB

总分
star star star star star
Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分
star star star star star
G Skill Intl F4-2800C14-16GTZ 16GB

G Skill Intl F4-2800C14-16GTZ 16GB

差异 规格 评论

差异

Samsung M393A1G40DB0-CPB 8GB 需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB
报告一个错误
G Skill Intl F4-2800C14-16GTZ 16GB 需要考虑的原因
G Skill Intl F4-2800C14-16GTZ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 49
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 8.7
    测试中的平均数值

规格

完整的技术规格清单
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-2800C14-16GTZ 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 38
  • 读取速度，GB/s
    10.9 left arrow 13.8
  • 写入速度，GB/s
    8.7 left arrow 10.2
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2427 left arrow 2841

Samsung M393A1G40DB0-CPB 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-2800C14-16GTZ 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Kingston KF2666C16D4/8G 8GB
Kingston KF2666C16D4/8G 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Corsair CMD16GX4M2C3333C16 8GB
Corsair CMD16GX4M2C3333C16 8GB
内存RAM
Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Corsair CMK8GX4M1A2666C16 8GB
Corsair CMK8GX4M1A2666C16 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston KHX3200C16D4/32GX 32GB
Kingston KHX3200C16D4/32GX 32GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Dust Leopard DDR4-2400 C17 8GB 8GB
Dust Leopard DDR4-2400 C17 8GB 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology BL16G30C15U4B.16FE 16GB
Crucial Technology BL16G30C15U4B.16FE 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Transcend Information TS512MLH64V1H 4GB
Transcend Information TS512MLH64V1H 4GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Samsung M393A2K40CB2-CTD 16GB
Samsung M393A2K40CB2-CTD 16GB
内存RAM