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Kingston KVR800D2N6/2G 2GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB

Kingston KVR800D2N6/2G 2GB vs Micron Technology 36ASF2G72PZ-2G3B1 16GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Micron Technology 36ASF2G72PZ-2G3B1 16GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 51
    左右 2% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 10.4
    测试中的平均数值
Micron Technology 36ASF2G72PZ-2G3B1 16GB 需要考虑的原因
Micron Technology 36ASF2G72PZ-2G3B1 16GB
报告一个错误
  • 更快的写入速度，GB/s
    7.9 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 51
  • 读取速度，GB/s
    5,143.3 left arrow 10.4
  • 写入速度，GB/s
    1,905.1 left arrow 7.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2387

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMW64GX4M2D3600C18 32GB
Corsair CMW64GX4M2D3600C18 32GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Samsung M378A2K43BB1-CRC 16GB
Samsung M378A2K43BB1-CRC 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Mushkin MES4S213FF16G28 16GB
Mushkin MES4S213FF16G28 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMW64GX4M4A2666C16 16GB
Corsair CMW64GX4M4A2666C16 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Golden Empire CL15-15-15 D4-3000 8GB
Golden Empire CL15-15-15 D4-3000 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Samsung M471A2K43BB1-CTD 16GB
Samsung M471A2K43BB1-CTD 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston KHX3200C18D4/4G 4GB
Kingston KHX3200C18D4/4G 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Essencore Limited KD48GU88A-26N1600 8GB
Essencore Limited KD48GU88A-26N1600 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Samsung V-GeN D4S8GL32A8TL 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMD32GX4M4B2400C10 8GB
Corsair CMD32GX4M4B2400C10 8GB
内存RAM