Micron Technology 16JSF25664HZ-1G1F1 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 29

左右 -53% 更低的延时
更快的读取速度，GB/s

19.5 10.5

测试中的平均数值
更快的写入速度，GB/s

15.8 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 19
读取速度，GB/s

10.5 19.5
写入速度，GB/s

7.1 15.8
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1425 3435

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Kingston 9905622-057.A00G 4GB

Kingston 9905622-057.A00G 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Crucial Technology BLS4G4D240FSB.8FADG 4GB

Crucial Technology BLS4G4D240FSB.8FADG 4GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Golden Empire CL16-16-16 D4-2800 8GB

Golden Empire CL16-16-16 D4-2800 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology GD2.2229BH.001 16GB

Apacer Technology GD2.2229BH.001 16GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Teikon TMA851S6CJR6N-VKSC 4GB

Teikon TMA851S6CJR6N-VKSC 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Corsair CMK16GX4M2D3200C16 8GB

Corsair CMK16GX4M2D3200C16 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Avant Technology J641GU42J9266ND 8GB

Avant Technology J641GU42J9266ND 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Kingston 9905701-008.A00G 16GB

Kingston 9905701-008.A00G 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

A-DATA Technology DDR4 2133 2OZ 8GB

A-DATA Technology DDR4 2133 2OZ 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Corsair CM4X4GF3000C15K4 4GB

Corsair CM4X4GF3000C15K4 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Corsair CMK16GX4M2B4266C19 8GB

Corsair CMK16GX4M2B4266C19 8GB