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Kingston KVR800D2N6/2G 2GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB

Kingston KVR800D2N6/2G 2GB vs Micron Technology 8ATF1G64AZ-2G6E1 8GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-2G6E1 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 16.2
    测试中的平均数值
Micron Technology 8ATF1G64AZ-2G6E1 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-2G6E1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 50
    左右 -52% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 33
  • 读取速度，GB/s
    5,143.3 left arrow 16.2
  • 写入速度，GB/s
    1,905.1 left arrow 12.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2973

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F5-6400J3239G16G 16GB
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SK Hynix HYMP112U64CP8-Y5 1GB
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内存RAM
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Kingston 99U5584-004.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
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Samsung M378A1K43CB2-CRC 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMD16GX4M2B3200C14 8GB
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内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
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内存RAM
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Kingston KHX2133C11D3/4GX 4GB
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G Skill Intl F4-4400C17-16GTZR 16GB
内存RAM
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Kingston ACR256X64D3S1333C9 2GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
内存RAM
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G Skill Intl F2-5300CL4-1GBSA 1GB
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Micron Technology 36ASF2G72PZ-2G3A3 16GB
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