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Kingston KVR800D2N6/2G 2GB
Panram International Corporation PUD42400C154G2NJK 4GB

Kingston KVR800D2N6/2G 2GB vs Panram International Corporation PUD42400C154G2NJK 4GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Panram International Corporation PUD42400C154G2NJK 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 13.5
    测试中的平均数值
Panram International Corporation PUD42400C154G2NJK 4GB 需要考虑的原因
Panram International Corporation PUD42400C154G2NJK 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 50
    左右 -92% 更低的延时
  • 更快的写入速度，GB/s
    8.3 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Panram International Corporation PUD42400C154G2NJK 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 26
  • 读取速度，GB/s
    5,143.3 left arrow 13.5
  • 写入速度，GB/s
    1,905.1 left arrow 8.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2157

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Panram International Corporation PUD42400C154G2NJK 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43DB1-CTD 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Panram International Corporation PUD42400C154G2NJK 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Mushkin 99[2/7/4]192F 4GB
Mushkin 99[2/7/4]192F 4GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HMA82GS6DJR8N-XN 16GB
SK Hynix HMA82GS6DJR8N-XN 16GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Corsair CMK64GX4M2A2400C16 32GB
Corsair CMK64GX4M2A2400C16 32GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Golden Empire CL19-19-19 D4-2666 4GB
Golden Empire CL19-19-19 D4-2666 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston HP24D4U7S8MH-8 8GB
Kingston HP24D4U7S8MH-8 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMW64GX4M4D3600C18 16GB
Corsair CMW64GX4M4D3600C18 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMW32GX4M4D3600C18 8GB
Corsair CMW32GX4M4D3600C18 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
内存RAM
Corsair CMZ16GX3M2A1600C10 8GB
Corsair CMZ16GX3M2A1600C10 8GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
内存RAM