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Kingston KVR800D2N6/2G 2GB
Samsung M378A5143TB2-CTD 4GB

Kingston KVR800D2N6/2G 2GB vs Samsung M378A5143TB2-CTD 4GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 76
    左右 34% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 10.3
    测试中的平均数值
Samsung M378A5143TB2-CTD 4GB 需要考虑的原因
Samsung M378A5143TB2-CTD 4GB
报告一个错误
  • 更快的写入速度，GB/s
    6.9 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Samsung M378A5143TB2-CTD 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 76
  • 读取速度，GB/s
    5,143.3 left arrow 10.3
  • 写入速度，GB/s
    1,905.1 left arrow 6.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    855 left arrow 1260

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Samsung M378A5143TB2-CTD 4GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston 99U5713-001.A00G 4GB
Kingston 99U5713-001.A00G 4GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston 9965667-001.A00G 16GB
Kingston 9965667-001.A00G 16GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
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SK Hynix HMA84GL7AMR4N-TF 32GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3600C18-8GTZN 8GB
G Skill Intl F4-3600C18-8GTZN 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Essencore Limited KD48GS481-26N1600 8GB
Essencore Limited KD48GS481-26N1600 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Samsung M378A5143TB2-CTD 4GB
Samsung M378A5143TB2-CTD 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMK64GX4M4D3000C16 16GB
Corsair CMK64GX4M4D3000C16 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD64GX4M4B3333C16 16GB
Corsair CMD64GX4M4B3333C16 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Mushkin MRX4U300GJJM16G 16GB
Mushkin MRX4U300GJJM16G 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMK16GX4M2K4266C16 8GB
Corsair CMK16GX4M2K4266C16 8GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-2800C15-8GVSB 8GB
G Skill Intl F4-2800C15-8GVSB 8GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Corsair CMD64GX4M8A2666C15 8GB
Corsair CMD64GX4M8A2666C15 8GB
内存RAM