Kingston KVR800D2N6/2G 2GB vs Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

总分

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

差异规格评论

差异

Kingston KVR800D2N6/2G 2GB

需要考虑的原因
Kingston KVR800D2N6/2G 2GB

报告一个错误

更快的读取速度，GB/s

5 20.6

测试中的平均数值

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 50

左右 -85% 更低的延时
更快的写入速度，GB/s

18.4 1,905.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Kingston KVR800D2N6/2G 2GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 27
读取速度，GB/s

5,143.3 20.6
写入速度，GB/s

1,905.1 18.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

855 3826

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

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