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Kingston KVR800D2S6/4G 4GB
Kingston KVR800D2S6/4G 4GB
比较
Kingston KVR800D2S6/4G 4GB vs Kingston KVR800D2S6/4G 4GB
总分
Kingston KVR800D2S6/4G 4GB
总分
Kingston KVR800D2S6/4G 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston KVR800D2S6/4G 4GB
报告一个错误
需要考虑的原因
Kingston KVR800D2S6/4G 4GB
报告一个错误
规格
完整的技术规格清单
Kingston KVR800D2S6/4G 4GB
Kingston KVR800D2S6/4G 4GB
主要特点
存储器类型
DDR2
DDR2
PassMark中的延时,ns
50
50
读取速度,GB/s
4,433.3
4,433.3
写入速度,GB/s
1,923.1
1,923.1
内存带宽,mbps
6400
6400
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度
5-5-5-15 / 800 MHz
5-5-5-15 / 800 MHz
排名PassMark (越多越好)
761
761
Kingston KVR800D2S6/4G 4GB RAM的比较
Kingston 9905471-006.A01LF 4GB
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2S6/4G 4GB RAM的比较
Kingston 9905471-006.A01LF 4GB
Kingston KVR800D2N6/2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Elpida EBJ40UG8BBU0-GN-F 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3333C16-16GTZSW 16GB
Corsair CMY8GX3M2A2133C8 4GB
G Skill Intl F4-3200C15-8GTZ 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMK64GX4M2A2400C16 32GB
A-DATA Technology DDR4 2666 8GB
SK Hynix HMA84GL7AMR4N-UH 32GB
Micron Technology 18HTF12872AY-800F1 1GB
Teclast TLD416G26A30 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M391A2K43BB1-CRC 16GB
Kingston 9905584-016.A00LF 4GB
INTENSO 5641152 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3200C16-4GVK 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston 99U5712-009.A00G 16GB
Kingston 99U5471-056.A00LF 8GB
Team Group Inc. Team-Elite-2133 4GB
Kingston HP698651-154-MCN 8GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-2400C16-16GFX 16GB
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