Kingston KVT8FP-HYC 4GB vs G Skill Intl F4-2666C15-4GVK 4GB

总分

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

总分

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

差异规格评论

差异

Kingston KVT8FP-HYC 4GB

需要考虑的原因
Kingston KVT8FP-HYC 4GB

报告一个错误

G Skill Intl F4-2666C15-4GVK 4GB

需要考虑的原因
G Skill Intl F4-2666C15-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 40

左右 -67% 更低的延时
更快的读取速度，GB/s

15.9 14.4

测试中的平均数值
更快的写入速度，GB/s

11.8 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KVT8FP-HYC 4GB

G Skill Intl F4-2666C15-4GVK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 24
读取速度，GB/s

14.4 15.9
写入速度，GB/s

9.6 11.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2432 2508

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

G Skill Intl F4-3000C16-16GSXWB 16GB

G Skill Intl F4-3000C16-16GSXWB 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3466C16-8GTZ 8GB

G Skill Intl F4-3466C16-8GTZ 8GB

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Transcend Information JM3200HLE-16G 16GB

Transcend Information JM3200HLE-16G 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-4133C19-8GTZKW 8GB

G Skill Intl F4-4133C19-8GTZKW 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Kingston KHX3600C18D4/32GX 32GB

Kingston KHX3600C18D4/32GX 32GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

DSL Memory D4SH1G081SH26A-C 8GB

DSL Memory D4SH1G081SH26A-C 8GB