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Kingston MSI16D3LS1KFG/4G 4GB
Samsung M471A5244CB0-CWE 4GB

Kingston MSI16D3LS1KFG/4G 4GB vs Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
Kingston MSI16D3LS1KFG/4G 4GB

Kingston MSI16D3LS1KFG/4G 4GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

差异 规格 评论

差异

Kingston MSI16D3LS1KFG/4G 4GB 需要考虑的原因
Kingston MSI16D3LS1KFG/4G 4GB
报告一个错误
Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 45
    左右 -18% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 8.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 4.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Kingston MSI16D3LS1KFG/4G 4GB
Samsung M471A5244CB0-CWE 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 38
  • 读取速度，GB/s
    8.1 left arrow 15.5
  • 写入速度，GB/s
    4.1 left arrow 12.0
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1302 left arrow 2283

Kingston MSI16D3LS1KFG/4G 4GB RAM的比较

Nanya Technology NT8GA64D88CX3S-JR 8GB

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
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内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM
Kingston MSI16D3LS1KFG/4G 4GB
Kingston MSI16D3LS1KFG/4G 4GB
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
SK Hynix HMT84GL7AMR4C-RD 32GB
SK Hynix HMT84GL7AMR4C-RD 32GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology CT16G4SFD824A.C16FN 16GB
Crucial Technology CT16G4SFD824A.C16FN 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology 78.D1GMM.AU10B 16GB
Apacer Technology 78.D1GMM.AU10B 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CMSO16GX4M1A2133C15 16GB
Corsair CMSO16GX4M1A2133C15 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 99U5704-001.A00G 4GB
Kingston 99U5704-001.A00G 4GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-2800C16-8GRR 8GB
G Skill Intl F4-2800C16-8GRR 8GB
内存RAM
Samsung M378B5273CH0-CK0 4GB
Samsung M378B5273CH0-CK0 4GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
内存RAM