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Kingston MSI16D3LS1MNG/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

Kingston MSI16D3LS1MNG/8G 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

总分
star star star star star
Kingston MSI16D3LS1MNG/8G 8GB

Kingston MSI16D3LS1MNG/8G 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

差异 规格 评论

差异

Kingston MSI16D3LS1MNG/8G 8GB 需要考虑的原因
Kingston MSI16D3LS1MNG/8G 8GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 41
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston MSI16D3LS1MNG/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 28
  • 读取速度，GB/s
    11.8 left arrow 13.8
  • 写入速度，GB/s
    7.2 left arrow 10.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 2354

Kingston MSI16D3LS1MNG/8G 8GB RAM的比较

Kingston KVR16N11/8-SP 8GB
Kingston 99U5700-032.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB RAM的比较

AMD R748G2133U2S 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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