Kingston MSI16D3LS1MNG/8G 8GB vs Samsung M378A5143EB1-CPB 4GB

总分

Kingston MSI16D3LS1MNG/8G 8GB

Kingston MSI16D3LS1MNG/8G 8GB

总分

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

差异规格评论

差异

Kingston MSI16D3LS1MNG/8G 8GB

需要考虑的原因
Kingston MSI16D3LS1MNG/8G 8GB

报告一个错误

Samsung M378A5143EB1-CPB 4GB

需要考虑的原因
Samsung M378A5143EB1-CPB 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 41

左右 -8% 更低的延时
更快的读取速度，GB/s

14.6 11.8

测试中的平均数值
更快的写入速度，GB/s

10.8 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston MSI16D3LS1MNG/8G 8GB

Samsung M378A5143EB1-CPB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 38
读取速度，GB/s

11.8 14.6
写入速度，GB/s

7.2 10.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 2298

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G32C16S4B.M8FE 8GB

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Kingston KHX2400C11D3/4GX 4GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Crucial Technology BL8G36C16U4BL.M8FE1 8GB

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V-GEN D4M8GL26A8TS6 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMK16GX4M1A2400C14 16GB

Corsair CMK16GX4M1A2400C14 16GB

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Samsung M378B5173BH0-CH9 4GB

Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

G Skill Intl F4-4000C17-8GVKB 8GB

G Skill Intl F4-4000C17-8GVKB 8GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F4-2800C16-8GRR 8GB

G Skill Intl F4-2800C16-8GRR 8GB