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Kingston SNY1600S11-4G-EDEG 4GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
比较
Kingston SNY1600S11-4G-EDEG 4GB vs Crucial Technology CT8G4SFD8213.C16FBD1 8GB
总分
Kingston SNY1600S11-4G-EDEG 4GB
总分
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston SNY1600S11-4G-EDEG 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
36
左右 19% 更低的延时
需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
报告一个错误
更快的读取速度,GB/s
14
9.4
测试中的平均数值
更快的写入速度,GB/s
10.1
5.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Kingston SNY1600S11-4G-EDEG 4GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
36
读取速度,GB/s
9.4
14.0
写入速度,GB/s
5.1
10.1
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1432
2416
Kingston SNY1600S11-4G-EDEG 4GB RAM的比较
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB RAM的比较
SK Hynix HYMP112U64CP8-S5 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-2800C16-8GVG 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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Samsung M391B5673EH1-CH9 2GB
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT16G4SFD8266 16GB
Kingston K1N7HK-ELC 2GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2133C15-8GRR 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston 9965589-005.A01G 8GB
Kingston KP4T2F-PSB 4GB
G Skill Intl F4-3200C14-16GVR 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
报告一个错误
×
Bug description
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