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Kingston SNY1600S11-4G-EDEG 4GB
Eudar Technology Inc. 8GXMP3000CL16 8GB

Kingston SNY1600S11-4G-EDEG 4GB vs Eudar Technology Inc. 8GXMP3000CL16 8GB

总分
star star star star star
Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

总分
star star star star star
Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

差异 规格 评论

差异

Kingston SNY1600S11-4G-EDEG 4GB 需要考虑的原因
Kingston SNY1600S11-4G-EDEG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 73
    左右 60% 更低的延时
Eudar Technology Inc. 8GXMP3000CL16 8GB 需要考虑的原因
Eudar Technology Inc. 8GXMP3000CL16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 9.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 5.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston SNY1600S11-4G-EDEG 4GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 73
  • 读取速度，GB/s
    9.4 left arrow 14.7
  • 写入速度，GB/s
    5.1 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1432 left arrow 1712

Kingston SNY1600S11-4G-EDEG 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB

Eudar Technology Inc. 8GXMP3000CL16 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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